库存现货供应EVERSPIN一级代理MR25H10CDF

FEATURES 
· No write delays
· Unlimited write endurance
· Data retention greater than 20 years
· Automatic data protection on power loss
· Block write protection
· Fast, simple SPI interface with up to 40 MHz clock rate
· 2.7 to 3.6 Volt power supply range
· Low current sleep mode
· Industrial temperatures
· Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
· Direct replacement for serial EEPROM, Flash, FeRAM
· AEC-Q100 Grade 1 Option

INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.